Efficient high-deposition-rate all-hot-wire hydrogenated amorphous silicon N-I-P solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 717-720

  Wang, Qi ^a   Iwaniczko, E ^a   Xu, Yueqin ^a   Nelson, B P ^a   Mahan, A H ^a   Crandall, R S ^a   Branz, H M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; DEPOSITION RATES; EFFICIENCY; FLOW OF GASES; HYDROGENATION; INTERFACES (MATERIALS); OPEN CIRCUIT VOLTAGE; SILICON SOLAR CELLS; SOLAR CELLS; STAINLESS STEEL; VAPOR DEPOSITION;

EFFICIENCY IMPROVEMENT; HIGH DEPOSITION RATES; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INITIAL EFFICIENCY; MICROCRYSTALLINITY; N-I-P SOLAR CELLS; SUBSTRATE TEMPERATURE;

AMORPHOUS SILICON;

EID: 84949544402     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915970     Document Type: Conference Paper

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