Can Si(113) wafers be an alternative to Si(001)?

Microelectronic Engineering

Volumn 56, Issue 1-2, 2001, Pages 195-203

  Mussig H J ^a   Dabrowski, J ^a   Ehwald, K E ^a   Gaworzewski, P ^a   Huber, A ^b   Lambert, U ^b  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Atomic scale control; Electrical features; Si SiO2 interface; Ultrathin SiO2

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; FILM PREPARATION; INTERFACES (MATERIALS); OXIDATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DIODES; SUBSTRATES; TENSILE STRESS; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

ATOMIC SCALE CONTROL; GATE-CONTROLLED DIODES;

SILICON WAFERS;

EID: 0035341575     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00527-X     Document Type: Article

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