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Volumn 2, Issue , 1999, Pages 868-869

Bias dependent performance of 1.55 μm absorption high-speed n-i-n photodetectors using low-temperature grown GaAs

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

EID: 0033309716     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (5)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.