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Volumn 2, Issue , 1999, Pages 868-869
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Bias dependent performance of 1.55 μm absorption high-speed n-i-n photodetectors using low-temperature grown GaAs
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
LIGHT ABSORPTION;
OPTICAL COMMUNICATION EQUIPMENT;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
BIAS DEPENDENCE;
CARRIER TRANSPORT;
PHOTODETECTORS;
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EID: 0033309716
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (5)
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