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Volumn 762, Issue , 2003, Pages 271-276

Leakage current behavior in common I-layer A-Si:H P-I-N photodiode arrays

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIFFUSION; ELECTRIC FIELD EFFECTS; HYDROGENATION; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SENSORS;

EID: 1642459415     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a21.4     Document Type: Conference Paper
Times cited : (4)

References (12)
  • 10
    • 0004123419 scopus 로고
    • Cambridge University Press: Cambridge
    • R. A. Street, Hydrogenated Amorphous Silicon, Cambridge University Press: Cambridge, pp 370-372, (1991).
    • (1991) Hydrogenated Amorphous Silicon , pp. 370-372
    • Street, R.A.1
  • 12
    • 0000393405 scopus 로고
    • K. Winer, Phys. Rev. B, 41(7), 12 150 (1990).
    • (1990) Phys. Rev. B , vol.41 , Issue.7 , pp. 12150
    • Winer, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.