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Volumn 762, Issue , 2003, Pages 271-276
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Leakage current behavior in common I-layer A-Si:H P-I-N photodiode arrays
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
DIFFUSION;
ELECTRIC FIELD EFFECTS;
HYDROGENATION;
LEAKAGE CURRENTS;
SEMICONDUCTOR DOPING;
SENSORS;
DIODE EDGE EFFECTS;
PHOTODIODE ARRAYS;
PHOTODIODES;
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EID: 1642459415
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-762-a21.4 Document Type: Conference Paper |
Times cited : (4)
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References (12)
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