Reverse bias currents in amorphous silicon nip sensors

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1155-1158

  Schiff, E A ^a,b   Street, R A ^a   Weisfield, R L ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

^b SYRACUSE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; LEAKAGE CURRENTS;

HYDROGENATED AMORPHOUS SILICON NIP DIODE SENSORS; REVERSE BIAS CURRENTS;

SILICON SENSORS;

EID: 0030563580     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00103-2     Document Type: Article

References (7)

1. R.A. Street, X.D. Wu, R. Weisfield, S, Ready, R. Apte, M. Nguyen and P. Nylen, in: Amorphous Silicon Technology -1995, ed. M. Hack et al. (Materials Research Society, Pittsburgh, 1995) p. 757.
2. V. Perez-Mendez, G. Cho, J. Drewery, T. Jing, S.N. Kaplan, S. Qureshi and D. Wildermuth, J. Non-Cryst. Solids 137&138 (1991) 1291.
3. M.J. Powell, I.D. French, J.R. Hughes, N.C. Bird, O.S. Davies, C. Galsse and J.E. Curran, in: Amorphous Silicon Technology - 1992, ed. M.J. Thompson et al., Mater. Res. Soc. Symp. Proc. Vol. 258 (Materials Research Society, Pittsburgh, 1992) p. 1127.
4. K. Kobayashi, S. Makida, Y. Sato and T. Hamano, in: Charge Coupled Devices and Solid State Optical Sensors III, Proc. SPIE Vol. 1900 (SPIE, Bellingham, 1993) p. 40.
5. R.A. Street, Philos. Mag. B63 (1991) 1343.
6. J.-B. Chevrier and B. Equer, J. Appl. Phys. 76 (1994) 7415.
7. R.A. Street and M. Hack, in: Amorphous Silicon Technology - 1991, ed. P.C. Taylor et al., Mater. Res. Soc. Symp. Proc. Vol. 219 (Materials Research Society, Pittsburgh, 1991) p. 135.