Observation of clear negative differential resistance characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs multiple quantum wells at room temperature

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 727-731

  Uesugi, K ^a   Kurimoto, M ^a   Suemune, I ^a   Yamamoto, M ^a   Uemura, T ^a   Machida, H ^b   Shimoyama, N ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Trichemical Laboratory   (Japan)

Author keywords

GaAsNSb; GaAsNSe; Multiple quantum well; Negative differential resistance

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; TUNNEL DIODES;

BAND OFFSETS; NEGATIVE DIFFERENTIAL RESISTANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642388873     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.270     Document Type: Conference Paper

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