A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1289-1294

  Chen, Chun Yuan ^a   Wang, Wei Chou ^a   Chiou, Wen Hui ^a   Wang, Chih Kai ^a   Chuang, Hung Ming ^a   Cheng, Shiou Ying ^b   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Resonant tunneling; Schr dinger equation; SE RTBT; Superlattice

Indexed keywords

CHARGE CARRIERS; HETEROJUNCTIONS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; WAVE EQUATIONS;

SUPERLATTICE EMITTER RESONANT TUNNELING BIPOLAR TRANSISTORS (SE-RTBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036721825     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00090-4     Document Type: Article

References (13)

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3. GaN microwave electronics
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6. A high-speed InGaAsP/InP DFB laser with an air-bridge contact configuration
7. Integrated waveguide/HBT technology for mm-wave optoelectronic applications
8. Quantum functional devices: Resonant-tunneling transistors, circuits with reduced complexity and multiple-valued logic
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11. A. Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device
12. Investigation of AlGaAs/GaAs superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT)
13. Determination of valence and conduction-band discontinuities at the (Ga, In) P/GaAs heterojunction by C-V profiling