Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures

Semiconductor Science and Technology

Volumn 17, Issue 1, 2002, Pages 87-92

  Chiou, Wen Huei ^a   Pan, Hsi Jen ^a   Liu, Rong Chau ^b   Chen, Chun Yuan ^a   Wang, Chih Kai ^a   Chuang, Hung Ming ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TUNNELING; ENERGY GAP; HOLE TRAPS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

COMPOSITE COLLECTOR STRUCTURES; TUNNELLING BARRIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036141287     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/1/314     Document Type: Article

References (20)