Room temperature luminescence from (Si/SiO2)n (n=1,2,3) multilayers grown in an industrial low-pressure chemical vapor deposition reactor

Journal of Applied Physics

Volumn 88, Issue 10, 2000, Pages 6044-6051

  Pucker, G ^a   Bellutti, P ^b   Spinella, C ^c   Gatterer, K ^d   Cazzanelli, M ^a   Pavesi, L ^a  

^a INFM   (Italy)

^b ITC IRST   (Italy)

^c CNR IMETEM   (Italy)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000842519     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1318372     Document Type: Article

References (31)

1. S. S. Iyer and Y.-H. Xie, Science 260, 40 (1993).
2. in Silicon Based Microphotonics: From Basics to Applications, Proceedings of the E. Fermi Schools: Course CXLI, edited by O. Bisi, S. U. Campisano, L. Pavesi, and F. Priolo (IOS, Amsterdam, 1999).
3. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 264, 1 (2000).
4. Y. Takahashi, T. Furuta, Y. Ono, T. Ishiyama, and M. Tabe, Jpn. J. Appl. Phys., Part 1 34, 950 (1995).
5. Y. Kanemitsu and S. Okamoto, Phys. Rev. B 56, 15 561 (1997).
6. Z. H. Lu, D. J. Lockwood, and J. M. Baribeau, Nature (London) 378, 258 (1995).
7. B. T. Sullivan and H. J. Labbè, J. Lumin. 80, 75 (1999).
8. J. Keränen, T. Lepistö, L. Ryen, S. V. Novikov, and E. Olsson, J. Appl. Phys. 84, 6827 (1998).
9. M. Zacharias, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, J. Bälsing, P. Kohlert, and P. Veit, J. Non-Cryst. Solids 227-230, 1132 (1998).
10. L. Heikkil, T. Kuusela, H.-P. Hedman, and H. Ihantola, Appl. Surf. Sci. 133, 84 (1998).
11. J. M. Baribeau, D. J. Lockwood, Z. H. Lu, H. J. Labbè, S. J. Rolfe, and G. I. Sproule, J. Lumin. 80, 417 (1999).
12. L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. P. McCaffrey, and D. J. Lockwood, Phys. Status Solidi A 165, 69 (1998).
13. L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. P. McCaffrey, and D. J. Lockwood, Appl. Phys. Lett. 72, 43 (1998).
14. L. Khriachtchev, M. Räsänen, S. Novikov, O. Kilpelä, and J. Sinkkonen, J. Appl. Phys. 86, 5601 (1999).
15. V. Mulloni, R. Chierchia, C. Mazzoleni, G. Pucker, and L. Pavesi, Philos. Mag. B 80, 705 (2000).
16. G. Pucker, V. Mulloni, L. Pavesi, P. Bellutti, A. Lui, and C. Spinella (unpublished).
17. F. Bassani, S. Ménard, and F. Arnaud d'Avitaya, Phys. Status Solidi A 165, 49 (1998).
18. S. V. Novikov, J. Sinkkonen, O. Kilpelä, and S. V. Gastev. J. Vac. Sci. Technol. B 15, 1471 (1997).
19. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1975), p. 95.
20. H. R. Philipp and E. A. Taft, Phys. Rev. 120, 37 (1960).
21. N. Koshida, H. Koyama, Y. Suda, Y. Yamamoto, M. Araki, T. Saito, and K. Sato, Appl. Phys. Lett. 63, 2774 (1993).
22. M. Nishida, Phys. Rev. B 59, 15 789 (1999).
23. A. Kux and M. Ben Chorin, Phys. Rev. B 51, 17 535 (1995).
24. D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi B 215, 871 (1999).
25. M. L. Brongersma, P. G. Kik, A. Polman, K. S. Min, and Harry A. Atwater, Appl. Phys. Lett. 76, 351 (2000).
26. Y. Kanemitsu, in Light Emission in Silicon-From Physics to Devices, Semiconductors and Semimetals Volume 49, edited by D. J. Lockwood (Academic, New York, 1998), p. 170-185.
27. Y. Sakurai, K. Nagasawa, H. Nishikawa, and Y. Ohki, J. Appl. Phys. 86, 370 (1999).
28. F. Iacona, G. Franzo, and C. Spinella, J. Appl. Phys. 87, 1295 (2000).
29. L. Pavesi, J. Appl. Phys. 80, 1 (1996).
30. Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, Phys. Rev. B 48, 4883 (1993).
31. S. Okamato and Y. Kanemitsu, Solid State Commun. 103, 573 (1997).