Physics and characteristics of a lateral p-n junction tunneling transistor

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 867-871

  Vyurkov, Vladimir ^a,c   Ryzhii, Victor ^a   Vaccaro, Pablo O ^b   Aida, Tahito ^b  

^a UNIVERSITY OF AIZU   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

Lateral p n junction; Quantum well; Tunneling transistor

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ESTIMATION; FERMI LEVEL; FUNCTIONS; HETEROJUNCTIONS; NEGATIVE RESISTANCE; OPTIMIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSPARENCY;

LATERAL P-N JUNCTIONS; TUNNELING TRANSISTORS;

TRANSISTORS;

EID: 1642274977     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.155     Document Type: Conference Paper

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