Optoelectronic devices based on lateral p-n junctions fabricated by molecular-beam epitaxy growth of silicon-doped GaAs on patterned (311)A-oriented substrates

IEEE Journal of Quantum Electronics

Volumn 36, Issue 7, 2000, Pages 849-857

  Vaccaro, Pablo O ^a,b   Fujita, Kazuhisa ^c  

^a IEEE

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^c Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BRAGG REFLECTORS; SEMICONDUCTOR EPITAXIAL LAYER; VERTICAL CAVITY SURFACE EMITTING LASER;

INTEGRATED OPTOELECTRONICS;

EID: 0034224814     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.848358     Document Type: Article

References (24)

1. M. Henini, Ed., "Special Issue on Novel Index Semiconductor Surfaces: Growth, Characterization and Devices," Microelectron. J., vol. 30, no. 4-5, 1999.
2. T. Hayakawa, K. Takahashi, M. Kondo, T. Suyama, S. Yamamoto, and T. Hijikata, "Enhancement in optical transition in (111)-oriented GaAs-AlGaAs quantum well structures," Phys. Rev. Lett., vol. 60, pp. 349-352, 1988.
3. A. T. Meney, "Effects of growth direction on lasing performance in GaAs-AlGaAs quantum wells," Superlatt. Microstruc., vol. 11, pp. 387-392, 1992.
4. C. Mailhiot and D. L. Smith, "Modulation of internal piezoelectric fields in strained-layer superlattices grown along the [111] orientation," J. Vac. Sci. Technol. A, vol. 7, pp. 609-615, 1989.
5. A. Madhukar, K. C. Rajkumar, and P. Chen, "In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates," Appl. Phys. Lett., vol. 62, pp. 1547-1549, 1993.
6. M. Fujii, T. Yamamoto, M. Shigeta, T. Takebe, K. Kobayashi, S. Hiyamizu, and I. Fujimoto, "Lateral p-n junctions on GaAs (111)A substrates patterned with equilateral triangles," Surf. Sci., vol. 267, pp. 26-28, 1992.
7. D. L. Miller, "Lateral p-n junction formation in GaAs molecular beam epitaxy by crystal plane dependent doping," Appl. Phys. Lett., vol. 47, pp 1309-1311, 1985.
8. H. P. Meier, R. F. Broom, P. W. Epperlein, E. van Gieson, Ch. Harder, H. Jackel, W. Walter, and D. J. Webb, "Problems related to the formation of lateral p-n junctions on channeled substrate (100) GaAs for lasers," J. Vac. Sci. Technol. B, vol. 6, pp. 692-695, 1988.
9. J. M. Ballingall and C. E. C. Wood, "Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide," Appl. Phys. Lett., vol. 41, pp. 947-949, 1982.
10. W. I. Wang, E. E. Mendez, T. S. Kuan, and L. Esaki, "Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures," Appl. Phys. Lett., vol. 47, pp. 826-828, 1985.
11. M. Shigeta, Y. Okano, H. Seto, H. Katahama, S. Nishine, and K. Kobayashi, "Silicon doping and MBE growth of GaAs on (111)A substrates," J. Cryst. Growth, vol. 111, pp. 248-253, 1991.
12. M. Inai, T. Yamamoto, T. Takebe, and T. Watanabe, "Electroluminescence from lateral p-n junctions grown on (111)A GaAs patterned substrates," Jpn. J. Appl. Phys., vol. 32, pp. L1718-L1721, 1993.
13. M. Inai, T. Yamamoto, M. Fujii, T. Takebe, and K. Kobayashi, "Electrical characterization of lateral p-n junctions grown on (111)A GaAs nonplanar substrates by molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 32, pp. 523-527, 1993.
14. H. Ohnishi, M. Hirai, K. Fujita, and T. Watanabe, "Lateral tunneling devices on GaAs (111)A and (311)A patterned substrates grown by MBE using only silicon dopant," Jpn. J. Appl. Phys., vol. 35, pp. 1168-1171, 1996.
15. P. O. Vaccaro, H. Ohnishi, and K. Fujita, "A light emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates," Appl. Phys. Lett., vol. 72, pp. 818-820, 1998.
16. T. Yamamoto, M. Inai, A. Shinoda, T. Takebe, and K. Watanabe, "Misorientation dependence of crystal structures and electrical properties of Si-doped AlAs grown on (111)A GaAs by molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 32, pp. 3346-3353, 1993.
17. K. Fujita, A. Shinoda, M. Inai, T. Yamamoto, M. Fujii, D. Levell, T. Takebe, and K. Kobayashi, "MBE growth of GaAs p-n junction LED's on (111)A GaAs substrates using only silicon dopant," J. Cryst. Growth, vol. 127, pp. 50-53, 1993.
18. L. Pavesi, "Photoluminescence Spectra of AlGaAs," in Properties of AlGaAs. S. Adachi, Ed. London, U.K.: IEE-INSPEC, 1993, pp. 245-268.
19. H. C. Sun, L. Davis, S. Sethi, J. Singh, and P. Bhattacharya, "Properties of a tunneling injection quantum-well laser: Recipe for a 'cold' device with a large modulation bandwidth," IEEE Photon. Technol. Lett., vol. 5, pp. 870-872, 1993.
20. W. Rideout, W. Sharfin, E. Koteles, M. Vassell, and B. Elman, "Well-barrier hole burning in quantum well lasers," IEEE Photon. Technol. Lett., vol. 3, pp. 784-786, 1991.
21. P. O. Vaccaro, H. Ohnishi, and K. Fujita, "Lateral-junction vertical-cavity surface-emitting laser grown by molecular beam epitaxy on a patterned GaAs (311)A substrate," Appl. Phys. Lett., vol. 74, pp. 3854-3856, 1999.
22. C. E. Norman, A. J. North, J. H. Burroughes, T. Burke, and D. A. Ritchie, "Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates," in Proc. Microsc. Semicond. Mater. Conf., vol. 157, Oxford, U.K., Apr., 7-10 1997, pp. 647-650.
23. P. O. Vaccaro, M. Uwani, T. Ohachi, M. Tani, and M. Kurosawa, "Lateral junction photodetector grown by molecular beam epitaxy on a GaAs (311)A-oriented substrate," presented at the 26th Int. Symp. Compound Semic., Berlin, Germany, Aug. 22-26, 1999.
24. R. Simons, Optical Control of Microwave Devices. Boston, MA: Artech House, 1990, ch. 4.