Lateral tunneling devices on GaAs (111)A and (311)A patterned substrates grown by MBE using only silicon dopant

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1168-1171

  Ohnishi, Hajime ^a   Hirai, Manabu ^a   Fujita, Kazuhisa ^a   Watanabe, Toshihide ^a  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

GaAs(111)A; GaAs(311)A; Interband tunneling; Lateral p n junction; Patterned substrate; Tunneling transistor

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TUNNEL DIODES;

GATE VOLTAGE; INTERBAND TUNNELING TRANSISTOR; NEGATIVE DIFFERENTIAL RESISTANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; VAN DER PAUW HALL MEASUREMENT;

TRANSISTORS;

EID: 0030078969     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1168     Document Type: Article

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