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Volumn 244, Issue 1-4, 2005, Pages 347-350

Control of Zn composition (0 < x < 1) in Cd 1-x Zn x Te epitaxial layers on GaAs substrates grown by MOVPE

Author keywords

CdZnTe; MOVPE; Optoelectronic devices

Indexed keywords

ATMOSPHERIC PRESSURE; COMPOSITION; EPITAXIAL GROWTH; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; RATE CONSTANTS; X RAY DIFFRACTION ANALYSIS;

EID: 15844407895     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.144     Document Type: Conference Paper
Times cited : (9)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.