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Volumn 244, Issue 1-4, 2005, Pages 347-350
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Control of Zn composition (0 < x < 1) in Cd 1-x Zn x Te epitaxial layers on GaAs substrates grown by MOVPE
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Author keywords
CdZnTe; MOVPE; Optoelectronic devices
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Indexed keywords
ATMOSPHERIC PRESSURE;
COMPOSITION;
EPITAXIAL GROWTH;
EXCITONS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTOELECTRONIC DEVICES;
RATE CONSTANTS;
X RAY DIFFRACTION ANALYSIS;
CDZNTE;
DIMETHYLZINC (DMZN);
DOUBLE CRYSTAL ROCKING CURVES (DCRC);
PRECURSORS;
CADMIUM COMPOUNDS;
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EID: 15844407895
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.09.144 Document Type: Conference Paper |
Times cited : (9)
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References (11)
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