SCOPUS 정보 검색 플랫폼

Physica B: Condensed Matter

Volumn 322, Issue 3-4, 2002, Pages 390-396

Effect of isothermal annealing on CdTe and the study of electrical properties of Au-CdTe Schottky barriers

(1) Al Shibani, K M a

a KING SAUD UNIVERSITY (Saudi Arabia)

Author keywords

Barrier height; Ideality factor; Isothermal annealing; Schottky barrier

Indexed keywords

ANNEALING; CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS; STOICHIOMETRY;

ISOTHERMAL ANNEALING;

SCHOTTKY BARRIER DIODES;

EID: 0036723462 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(02)01278-4 Document Type: Article

Times cited : (26)

References (39)

1
- 0020090158
- (1983) IEEE Trans. Nucl. Sci. , vol.NS-30 , pp. 368
- Burger, A.¹ Shilo, I.² Schieber, M.³

2
- 0010023825
- Dordrecht
- (1978) Proceedings of the Photovoltaic Solar Energy Conference , pp. 630
- Bonnet, D.¹

3
- 0039839403
- (1988) J. Crystal Growth , vol.86 , pp. 677
- Al-Bassam, A.¹ Brinkman, A.² Russell, G.³ Woods, J.⁴

4
- 0021425326
- (1984) Sol. Cells , vol.11 , pp. 367
- Matsumoto, H.¹ Kuribagashi, K.² Uda, H.³ Komatsu, Y.⁴ Nakano, A.⁵ Ikegami, S.⁶

5
- 0024752636
- (1989) Solar Cells , vol.27 , pp. 77
- Al-Bright, S.P.¹ Jordon, J.F.² Akerman, B.³ Chamberlin, R.R.⁴

6
- 0003772246
- Academic Press, New York
- (1978) Semiconductors and Semimetals, Vol. 13: Cadmium Telluride , vol.13
- Zanio, K.¹

7
- 0000742510
- (1977) Rev. Phys. Appl. , vol.12 , pp. 277
- Wald, F.V.¹

8
- 0001621171
- (1977) Rev. Phys. Appl. , vol.12 , pp. 391
- Bell, R.O.¹

9
- 0029409803
- (1995) Solid State Electron. , vol.38 , pp. 1923
- Dio, M.D.¹ Cola, A.² Lupo, M.G.³ Vasanelli, L.⁴

10
- 36149011372
- (1964) Phys. Rev. A , vol.134 , pp. 713
- Mead, C.A.¹ Spitzer, W.G.²

11
- 0016990007
- (1976) Phys. Stat. Sol. A , vol.36 , pp. 747
- Touskova, T.¹ Kuzel, R.²

12
- 0017973832
- (1978) Phys. Stat. Sol. A , vol.47 , pp. 123
- Takebe, T.¹ Saraie, J.² Tanaka, T.³

13
- 0019625302
- (1981) Vacuum , vol.31 , pp. 639
- Patterson, M.H.¹ Williams, R.H.²

14
- 0023844154
- (1988) Sol. Cells , vol.23 , pp. 1
- Bube, R.H.¹

15
- 0010023197
- (1992) Austr. J. Phys. , vol.45 , pp. 99
- Al-Dhafiri, A.M.¹

16
- 0010054184
- (1992) Can. J. Phys. , vol.70 , Issue.12 , pp. 1272
- Al-Dhafiri, A.M.¹ Al-Bassam, A.A.I.² Al-Juffali, A.A.³

17
- 0021497949
- (1984) Appl. Phys. Lett. , vol.45 , pp. 563
- Podlesnik, D.V.¹ Gilgen, H.H.² Osgood R.M., Jr.³

18
- 0027577999
- (1993) Appl. Phys. Lett. , vol.62 , Issue.15 , pp. 1809
- Khare, R.¹ Young, D.B.² Snider, G.L.³ Hu, E.L.⁴

19
- 0030195968
- (1996) Sol. Energy Mater. Sol. Cells , vol.40 , pp. 221
- Al-Dhafiri, A.M.¹

20
- 0010018632
- (1992) Appl. Phys. Lett. , vol.60 , pp. 1878
- Wu, Y.S.¹ Becer, C.R.² Waag, A.³ Bicknell-Tassius, R.⁴ Landwehr, G.⁵

21
- 0020917691
- (1983) J. Phys. D: Appl. Phys. , vol.16 , pp. 2391
- Werthen, J.C.¹ Haring, J.P.² Fahrenbruch, A.L.³ Bube, R.W.⁴

22
- 0003546026
- Clarendon Press, Oxford
- (1980) Metal-Semiconductor Contacts
- Rhoderic, E.H.¹

23
- 0009981520
- (1979) J. Phys. D: Appl. Phys. , vol.12 , pp. 145
- Lepley, B.¹ Nguyen, P.H.² Boutrit, C.³ Ravelet, R.⁴

24
- 0010054852
- (1978) Thin Solid Films , vol.48 , pp. 261
- Roeut, V.L.¹

25
- 36849103369
- (1966) J. Appl. Phys. , vol.37 , pp. 3024
- Cowley, A.M.¹

26
- 0011715992
- (1971) J. Phys. D: Appl. Phys. , vol.4 , pp. 1589
- Card, H.C.¹ Rhoderick, E.²

27
- 0022723345
- (1986) Solid State Electron. , vol.29 , pp. 555
- Chattopadhyay, P.¹ Daw, N.²

28
- 0004005306
- Wiley, New York
- (1981) Physics of Semiconductor Devices,2nd edition
- Sze, S.M.¹

29
- 0001676471
- (1982) J. Crystal Growth , vol.59 , pp. 223
- Ture, I.E.¹ Russell, G.J.² Woods, J.³

30
- 0028447994
- (1994) Sol. Energy Mater. Sol. Cells , vol.33 , pp. 177
- Al-Dhafiri, A.M.¹ Al-Bassam, A.A.²

31
- 0010024065
- e-mail: mailto:aman@ksu.edu.sa, private communication, accepted for publication
- (2002) Can. J. Phys.
- Amanullah, F.M.¹

32
- 0010020467
- (1993) Appl. Phys. Lett. , vol.62 , Issue.13 , pp. 1510
- Wu, Y.S.¹ Becer, C.R.² Waag, A.³ Von Schierstedt, K.⁴ Bicknell-Tassius, R.N.⁵

33
- 36549100027
- (1989) Appl. Phys. Lett. , vol.54 , pp. 137
- Dharmadasa, I.M.¹ Thorton, J.M.² Williams, R.H.³

34
- 0003869626
- Springer, New York
- (1981) Point Defect Semiconductor II: Experimental Aspects
- Lannoo, M.¹ Bourgoin, J.²

35
- 0010025165
- (1986) Sov. Phys. Semicond. , vol.20 , pp. 252
- Baidullaeva, A.¹ Dyakin, V.V.² Koval, V.V.³ Lyutchenko, A.V.⁴ Mozol, P.E.⁵ Sal'kov, E.A.⁶

36
- 0003476553
- Plenum Press, New York
- (1984) Metal-Semiconductor Schottky Barrier Junctions and their Applications
- Sharma, B.L.¹

37
- 0015398153
- (1972) Solid State Commun. , vol.11 , pp. 669
- Hackam, R.¹ Harrop, P.²

38
- 0016572564
- (1975) Phys. Stat. Sol. A , vol.32 , pp. 165
- Tyagi, M.S.¹ Arora, S.N.²

39
- 4244152649
- (1977) Surf. Sci. , vol.64 , pp. 323
- Tyagi, M.S.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.