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Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 305-309

Growth and characterization of P-doped CVD diamond (1 1 1) thin films homoepitaxially grown using trimethylphosphine

(3) Wada, Hideki a Teraji, Tokuyuki a Ito, Toshimichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

(1 1 1); Diamond; n Type; Phosphorus; Trimethylphosphine; Two carrier model

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; DIAMONDS; DOPING (ADDITIVES); EPITAXIAL GROWTH; FILM GROWTH; PHOSPHORUS; THIN FILMS;

HOPPING CONDUCTION; N-TYPE; TRIMETHYLPHOSPHINE; TWO-CARRIER MODEL;

DIAMOND FILMS;

EID: 15844366265 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.10.137 Document Type: Conference Paper

Times cited : (6)

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