Novel Si codoped Pb(Zr,Ti,Nb)O3 thin film for high-density ferroelectric random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 267-274

  Kijima, Takeshi ^a   Aoyama, Taku ^a   Miyazawa, Hiromu ^a   Hamada, Yasuaki ^a   Ohashi, Koji ^a   Nakayama, Masao ^a   Natori, Eiji ^a   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

FeRAM; Ferroelectric; Nb doped PZT; Perovskite; Si dopant

Indexed keywords

DOPING (ADDITIVES); EVAPORATION; FERROELECTRIC DEVICES; FERROELECTRICITY; NIOBIUM; PEROVSKITE; RAMAN SPECTROSCOPY; RANDOM ACCESS STORAGE; SILICON; SOL-GELS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); NB-DOPED PZT; NONVOLATILE MEMORY; SI DOPANT;

LEAD COMPOUNDS;

EID: 15544387773     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.267     Document Type: Article

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