A Simulation Study of High-Speed Silicon Heteroemitter Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 6, 1989, Pages 1102-1109

  Ugajin, Mamoru ^a   Konaka, Shinsuke ^a   Yokoyama, Kiyoyuki ^a   Amemiya, Yoshihito ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

BAND DISCONTINUITY; ENERGY GAP; HETEROEMITTER BIPOLAR TRANSISTORS; HETEROINTERFACE RECOMBINATION; HIGH SPEED TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0024681269     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.24354     Document Type: Article

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