CMOS Front-End Investigation Over Large Areas by Deprocessing from the Back Side

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2001, Pages 237-241

  Zachariasse, Frank ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ETCHING; FAILURE ANALYSIS; GLUES; INFORMATION ANALYSIS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSISTORS;

CRITICAL DIMENSIONS (CD); GATE OXIDES; INTER LAYER DIELECTRICS (ILD);

CMOS INTEGRATED CIRCUITS;

EID: 1542270705     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Several types of resins were tested. Epoxy bond 111 (part number A34.1441) by Allied High Tech Products is recommended.
2. I. Zubel and M. Kramkowska, "The effect of isopropyl alcohol on etching rate and roughness of (1 0 0) Si surface etched in KOH and TMAH solutions", Sensors and Actuators A (2001) (In press)
3. A. Nishida, T. Sekiguchi, T. Yamanaka, R. Yamada, K. Nakamura, S. Tomimatsu, K. Umemura, H. Kakibayashi, Y. Yoshida, K. Funayama, S. Ikeda, "Visualisation of local gate depletion in PMOSFETs using unique backside etching and selective etching technique", ISTFA Proceedings 1999
4. E.M. Fleuren and X-M Zhang, "Observation of titanium-silcide via back side etching", In-line characterization, Yield, Reliability and Failure analysis in Microelectronic Manufacturing II, Proceedings of SPIE 4406 (2001), p. 13-20
5. T. Kane, K. DeVries, M. Tenney and A. Patel. "Characterization and fault identification of copper BEOL Sub 0.25 μm Six Level Metal Microprocessor Designs, ISTFA Proceedings 1999, pp 335-341