Visualization of Local Gate Depletion in PMOSFETs Using Unique Backside Etching and Selective Etching Technique

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1999, Pages 413-418

  Nishida, Akio ^a   Sekiguchi, Tomoko ^a   Yamanaka, Toshiaki ^a   Yamada, Renichi ^a   Nakamura, Kuniyasu ^a   Tomimatsu, Satoshi ^a   Umemura, K ^a   Kakibayashi, Hiroshi ^a   Yoshida, Yasuko ^a   Funayama, Kohta ^a   Ikeda, Shuji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); ELECTROCHEMICAL ELECTRODES; ETCHING; FAILURE ANALYSIS; GATES (TRANSISTOR); LSI CIRCUITS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

ETCHANTS; FILM QUALITY;

MOSFET DEVICES;

EID: 0012408924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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