Observation of titanium-silicide via back side etching

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4406, Issue , 2001, Pages 13-20

  Fleuren, E M ^a   Zhang, X M ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Back side preparation; C49 and C54 phases; Junction leakage; Silicide; Titanium silicide

Indexed keywords

FAILURE ANALYSIS; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TITANIUM COMPOUNDS;

JUNCTION LEAKAGES; PHOTO-EMISSION MICROSCOPY (PEM);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034845324     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425264     Document Type: Conference Paper

References (6)

1. Mechanisms for enhanced formation of the C54 phase of titanium silicide in ultralarge-scale integration contacts
2. Local identification and mapping of C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy
3. Application of choline in semiconductor technology
4. 2
5. 2 polycrystalline thin films by micro-Raman spectroscopy