In-situ end point detection of the STI-CMP process using a high selectivity slurry

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 463-471

  Kim, Sang Yong ^a   Lee, Kyoung Jin ^b   Seo, Yong Jin ^b  

^a ANAM Semiconductor Co Inc   (South Korea)

^b Daebul University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); End point detection (EPD); High selectivity slurry (HSS); Reverse moat etch process; Shallow trench isolation (STI)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ETCHING; OXIDATION; SILICON NITRIDE;

END POINT DETECTION (EPD);

SILICON WAFERS;

EID: 0037393550     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00929-2     Document Type: Conference Paper

References (9)

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