High-quality 1.3-μm AlGaInAs MQW growth on a grating and its application to BH DFB-LDs for uncooled 10-Gb/s operation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 239-242

  Kobayashi, R ^a   Okuda, T ^a   Muroya, Y ^a   Tsuruoka, K ^a   Koui, T ^a   Ohsawa, Y ^a   Tsukuda, T ^a   Nakamura, T ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; DIFFRACTION GRATINGS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; TEMPERATURE; EPITAXIAL GROWTH; INDIUM; INDIUM PHOSPHIDE; LABORATORIES; SUBSTRATES;

ALUMINUM GALLIUM INDIUM ARSENIDE; THRESHOLD CURRENT;

DISTRIBUTED FEEDBACK LASERS; SEMICONDUCTOR QUANTUM WELLS;

DH-HEMTS; DIRECT MODULATION; HIGH SLOPE EFFICIENCY; LOW THRESHOLD CURRENT; NATIONAL ELECTRIC CODE; OPERATING TEMPERATURE; QUANTUM WELL DEVICE; THRESHOLD CURRENTS;

EID: 0037810862     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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