Sol-gel TiO2(La) films as gate dielectric in MOS structures

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1998, Pages 217-220

  Simeonov, Simeon ^a   Kafedjiiska, Elisaveta ^a   Szekeres, Anna ^a   Parlog, Constantza ^a   Gartner, Mariuca ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTRIC CONDUCTANCE; FILM PREPARATION; LANTHANUM; MOS DEVICES; PERMITTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SOL-GELS; TITANIUM DIOXIDE;

ACCEPTOR-LIKE DEFECTS; CONDUCTANCE-VOLTAGE CHARACTERISTICS;

SEMICONDUCTING FILMS;

EID: 0032310103     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)