New evidence for velocity overshoot in a 200 nm pseudomorphic HEMT

Microelectronics Journal

Volumn 27, Issue 8, 1996, Pages 785-793

  Babiker, S ^a   Cameron, N ^a   Asenov, A ^a   Beaumont, S P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; DIFFUSION; EFFECTS; ELECTRON VELOCITY ANALYZERS; ELECTRONS; MONTE CARLO METHODS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE; VELOCITY;

DRIFT DIFFUSION; OVERSHOOT; TRANSCONDUCTANCE MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030287473     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(96)00011-0     Document Type: Article

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