Maskless fabrication of nanoelectrode structures with nanogaps by using Ga focused ion beams

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 253-259

  Nagase, Takashi ^a   Gamo, Kenji ^a   Kubota, Tohru ^a   Mashiko, Shinro ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Focused ion beam; Maskless fabrication; Molecular electronic device; Nanoelectrode

Indexed keywords

ELECTRIC POWER UTILIZATION; GALLIUM; ION BEAMS; PHOTOLITHOGRAPHY; RADIATION DAMAGE; SILICON WAFERS;

FOCUSED ION BEAM; MASKLESS FABRICATION; MOLECULAR ELECTRONIC DEVICE; NANOELECTRODES;

NANOSTRUCTURED MATERIALS;

EID: 14944358726     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.037     Document Type: Conference Paper

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