Experimental study of the solid-liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth

Journal of Crystal Growth

Volumn 275, Issue 3-4, 2005, Pages 422-432

  Duhanian, N ^a   Duffar, T ^b   Marin, C ^c   Dieguez, E ^d   Garandet, J P ^a   Dantan, P ^e   Guiffant, G ^e  

^a CEA GRENOBLE   (France)

^b Centre National de la Recherche Scientifique   (France)

^c UNIVERSITY OF PUERTO RICO RIO PIEDRAS   (Puerto Rico)

^d UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^e UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

A1. Segregation; A2. Bridgman technique; B1. Antimonides; B2. Semiconducting ternary compounds; Growth from the melt

Indexed keywords

ALLOYS; COMPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DIFFUSION; HEAT TRANSFER; HYDRODYNAMICS; INTERFACES (MATERIALS); MELTING; METALLOGRAPHY; NUMERICAL METHODS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TERNARY SYSTEMS; THERMAL EFFECTS;

ANTIMONIDES; BRIDGMAN TECHNIQUE; GROWTH FROM THE MELT; SEGREGATION; SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTOR MATERIALS;

EID: 14844342038     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.016     Document Type: Article

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