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Volumn 174, Issue 1-4, 1997, Pages 267-271
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Seeded growth of HgZnTe by directional solidification using an initial composition profile simulating a "diffusion-boundary" layer
a a a a b |
Author keywords
Diffusion boundary layer; Directional solidification; Seeded growth
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Indexed keywords
BOUNDARY LAYERS;
COMPOSITION;
CRYSTAL GROWTH;
DIFFUSION IN SOLIDS;
PHASE INTERFACES;
SOLIDIFICATION;
BACK MELTING;
SEEDED GROWTH;
SEMICONDUCTING TELLURIUM COMPOUNDS;
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EID: 0031547212
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)01156-6 Document Type: Article |
Times cited : (2)
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References (11)
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