Growth of three-dimensional SiC clusters on Si modelled by KMC

Computational Materials Science

Volumn 33, Issue 1-3, 2005, Pages 375-381

  Schmidt, A A ^a   Kharlamov, V S ^a   Safonov, K L ^a   Trushin, Yu V ^a   Zhurkin, E E ^b   Cimalla, V ^c   Ambacher, O ^c   Pezoldt, J ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DEPOSITION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MONTE CARLO METHODS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEAR BATTERIES; PROBABILITY;

ANTIDOT STRUCTURES; COLD CATHODE EMISSION; NANOWIRE HETEROSTRUCTURES; SILICON CARBIDE NANOCLUSTERS;

SILICON CARBIDE;

EID: 14644446070     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.12.005     Document Type: Conference Paper

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