Modeling surface kinetics and morphology during 3C, 2H, 4H, and 6H-SiC (111) step-flow growth

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 6, 1998, Pages 3314-3327

  Stout, Phillip J ^a  

^a CFD RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032350557     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581484     Document Type: Article

References (20)

1. S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima, Silicon Carbide and Related Materials 1995, Inst. Phys. Conf. Ser. No. 142 (Institute of Physics, Philadelphia, 1996), Chap. 4.
2. H. Jagodzinski and H. Arnold, Silicon Carbide a High Temperature Semiconductor, edited by J. R. O'Connor and J. Smiltens (Pergamon, New York, 1960), pp. 136-146.
3. F. C. Franks, Philos. Mag. 43, 1014 (1951).
4. J. A. Powell and H. A. Will, J. Appl. Phys. 43, 1400 (1972).
5. Silicon Carbide 1973, Appendix II, Tables of Data on Silicon Carbide, edited by R. C. Marshall, J. W. Faust, Jr., and C. E. Ryan (University of South Carolina Press, Columbia, SC, 1974), pp. 668-676.
6. P. Heuell, M. A. Kulakov, and B. Bullemer, Surf. Sci. 331-333, 965 (1995).
7. P. Heuell, M. A. Kulakov, and B. Bullemer, Proceedings of the Fifth International Conference on Silicon Carbide and Related Materials 1993. Institute of Physics Conference Ser. No. 137 (Institute of Physics, Philadelphia, 1994), pp. 353-356.
8. H. Pfeiffer, T. Klupsch, and W. Haubenreiber, Microscopic Theory of Crystal Growth (Akademie, Berlin, 1989).
9. D. Srivastava and B. J. Garrison, Phys. Rev. B 47, 4464 (1993).
10. L. S. Ramsdell, Am. Mineral. 29, 431 (1944); ibid. 30, 519 (1945); ibid. 32, 64 (1947).
11. L. S. Ramsdell, Am. Mineral. 29, 431 (1944); ibid. 30, 519 (1945); ibid. 32, 64 (1947).
12. L. S. Ramsdell, Am. Mineral. 29, 431 (1944); ibid. 30, 519 (1945); ibid. 32, 64 (1947).
13. G. S. Zhdanow, Dokl. Akad. Nauk SSSR 48, 39 (1945).
14. R. W. G. Wyckoff, Crystal Structures (Interscience, New York, 1948), Vol. 1, p. 25.
15. T. Kimoto and H. Matsunami, J. Appl. Phys. 76, 7322 (1994).
16. J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and N. P. Pirouz, Appl. Phys. Lett. 56, 1442 (1990).
17. L. B. Rowland, R. S. Kern, S. Tanaka, and R. F. Davis, J. Mater. Res. 8, 2753 (1993).
18. T. Kimoto, H. Nishino, W. S. Yoo, and H. Matsunami, J. Appl. Phys. 73, 726 (1993).
19. T. Kimoto and H. Matsunami, J. Appl. Phys. 75, 850 (1994).
20. W. von Muench and I. Pfaffeneder, Thin Solid Films 31, 39 (1976).