First principles study on the geometry and stability of the Ge atom in initial Ge growth on the Si(001) surface

Surface Science

Volumn 423, Issue 1, 1999, Pages 32-42

  Yoshimoto, Y ^a   Tsukada, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

DENSITY FUNCTIONAL THEORY (DFT); GENERALIZED GRADIENT APPROXIMATION (GGA);

SEMICONDUCTING SILICON;

EID: 0033099707     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00887-5     Document Type: Article

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