Structural properties and stability of defected ZnSe/GaAs(0 0 1) interfaces

Computational Materials Science

Volumn 33, Issue 1-3, 2005, Pages 256-262

  Stroppa, A ^a   Peressi, M ^b  

^a DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; THERMODYNAMICS; ZINC COMPOUNDS;

DENSITY FUNCTIONAL THEORY; PSEUDOPOTENTIAL APPROACH; STACKING FAULT DENSITY;

HETEROJUNCTIONS;

EID: 14644430453     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.12.049     Document Type: Conference Paper

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