Electrical properties and transport in boron nitride nanotubes

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4131-4133

  Radosavljevic M ^a   Appenzeller, J ^a   Derycke, V ^a   Martel, R ^a   Avouris, Ph ^a   Loiseau, A ^b   Cochon, J L ^b   Pigache, D ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BORON COMPOUNDS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; ENERGY GAP; GATES (TRANSISTOR); OHMIC CONTACTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMIONIC EMISSION; TITANIUM;

BORON NITRIDE NANOTUBES (BNNT);

CARBON NANOTUBES;

EID: 0037828766     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581370     Document Type: Article

References (19)

1. Carbon nanotubes: Synthesis, Structure, Properties and Applications, edited by M. S. Dresselhaus, G. Dresselhaus, and Ph. Avouris (Springer, Berlin, 2001); C. Dekker, Phys. Today 52, 22 (1999).
2. Carbon nanotubes: Synthesis, Structure, Properties and Applications, edited by M. S. Dresselhaus, G. Dresselhaus, and Ph. Avouris (Springer, Berlin, 2001); C. Dekker, Phys. Today 52, 22 (1999).
3. A. Rubio, J. L. Corkill, and M. L. Cohen, Phys. Rev. B 49, 5081 (1994).
4. P. Král, E. J. Mele, and D. Tomanek, Phys. Rev. Lett. 85, 1512 (2000); E. J. Mele and P. Král, Phys. Rev. Lett. 88, 056803 (2002).
5. P. Král, E. J. Mele, and D. Tomanek, Phys. Rev. Lett. 85, 1512 (2000); E. J. Mele and P. Král, Phys. Rev. Lett. 88, 056803 (2002).
6. N. G. Chopra, R. J. Luyken, K. Cherrey, V. H. Crespi, M. L. Cohen, S. G. Louie, and A. Zettl, Science (Washington, DC, U.S.) 269, 966 (1995); A. Loiseau, F. Willaime, N. Demoncy, G. Hug, and H. Pascard, Phys. Rev. Lett. 76, 4737 (1996).
7. N. G. Chopra, R. J. Luyken, K. Cherrey, V. H. Crespi, M. L. Cohen, S. G. Louie, and A. Zettl, Science (Washington, DC, U.S.) 269, 966 (1995); A. Loiseau, F. Willaime, N. Demoncy, G. Hug, and H. Pascard, Phys. Rev. Lett. 76, 4737 (1996).
8. J. Cummings and A. Zettl, Chem. Phys. Lett. 316, 211 (2000).
9. R. S. Lee, J. Gavillet, M. Lamy de la Chapelle, A. Loiseau, J.-L. Cochon, D. Pigache, J. Thibault, and F. Willaime, Phys. Rev. B 64, 121405(R) (2001).
10. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. 87, 256805 (2001).
11. J. Appenzeller, J. Knoch, V. Derycke, R. Mattel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801 (2002).
12. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
13. C. Kimura, T. Yamamoto, and T. Sugino, Diamond Relat. Mater. 10, 1404 (2001).
14. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avauris, Appl. Phys. Lett. 80, 3817 (2002).
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
16. J. Knoch and J. Appenzeller, Appl. Phys. Lett. 81, 3082 (2002).
17. M. Freitag, M. Radosavljević, Y. Zhou, A. T. Johnson, and W. F. Smith, Appl. Phys. Lett. 79, 3326 (2001).
18. F. Leonard and J. Tersoff, Phys. Rev. Lett. 84, 4693 (2000).
19. e, which is obtained from energy dispersion relations (see Ref. 2) for a (10,10) BNNT corresponding to a tube diameter of 1.4 nm (see Ref. 6) used in our experiments.