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Volumn 61-62, Issue , 1999, Pages 450-453
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Studies of the effect of proton irradiation on 6H-SiC pn junction properties
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Author keywords
6H SiC; Compensation; Deep levels; Lifetimes; Proton irradiation
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Indexed keywords
PROTON IRRADIATION;
ANNEALING;
CURRENT VOLTAGE CHARACTERISTICS;
HIGH TEMPERATURE EFFECTS;
PROTONS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
SEMICONDUCTOR JUNCTIONS;
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EID: 0032675178
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00553-4 Document Type: Article |
Times cited : (9)
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References (14)
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