Fundamental absorption edge spectrum of ultrathin a-Si : H film in a-Si : H/a-Si3N4 : H multilayer obtained from luminescence excitation spectrum

Solid State Communications

Volumn 104, Issue 2, 1997, Pages 119-123

  Murayama, Kazuro ^a   Toyama, Tomoyuki ^a   Miyazaki, Seiichi ^b   Hirose, Masataka ^b  

^a NIHON UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

A. disordered system; A. quantum well; A. semiconductors; D. optical properties; E. luminescence

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; BAND STRUCTURE; LUMINESCENCE; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRATHIN FILMS;

QUANTUM CONFINEMENT;

MULTILAYERS;

EID: 0031258131     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00253-6     Document Type: Article

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