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Volumn 68, Issue 13, 1996, Pages 1814-1816

A model of size-dependent photoluminescence in amorphous silicon nanostructures: Comparison with observations of porous silicon

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ENERGY GAP; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; QUANTUM EFFICIENCY; THERMAL EFFECTS;

EID: 0030104790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116022     Document Type: Review
Times cited : (45)

References (19)
  • 10
    • 0021547057 scopus 로고
    • in edited by J. Pankove Academic, New York
    • R. A. Street, in Semiconductors and Semimetals, edited by J. Pankove (Academic, New York, 1984), Vol. 21B, p. 197.
    • (1984) Semiconductors and Semimetals , vol.21 B , pp. 197
    • Street, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.