Effective excitation cross section and lifetime of Er3+ ions in Si:Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

Physics of the Solid State

Volumn 47, Issue 1, 2005, Pages 98-101

  Remizov, D Yu ^a   Shmagin, V B ^a   Antonov, A V ^a   Kuznetsov, V P ^a   Krasil'nik, Z F ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13944273473     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1853454     Document Type: Conference Paper

References (11)

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