1.54 μm Light emission from Er/O and Er/F doped Si p-i-n diodes grown by molecular beam epitaxy

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 309-314

  Ni, W X ^a   Du, C X ^a   Joelsson, K B ^a   Pozina, G ^a   Hansson, G V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Auger energy transfer; Electroluminescence; Er; Excitation deexcitation; Hot electron; Light emitting diode; Si

Indexed keywords

EID: 0002005687     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00117-3     Document Type: Article

References (10)

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