Effect of the p-n Junction Breakdown Mechanism on the Er3+ Ion Electroluminescence Intensity and Excitation Efficiency in Si : Er Epitaxial Layers Grown through Sublimation Molecular Beam Epitaxy

Physics of the Solid State

Volumn 46, Issue 1, 2004, Pages 109-112

  Shmagin, V B ^a   Remizov, D Yu ^a   Krasil'nik, Z F ^a   Kuznetsov, Y P ^a   Shabanov, Y N ^a   Krasil'nikova, L Y ^a   Kryzhkov, D I ^a   Drozdov, M N ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

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Indexed keywords

EID: 0742303704     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1641934     Document Type: Conference Paper

References (12)

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