Spin depolarization in the transport of holes across GaxMn 1-xAs/GayAl1-yAs/p-GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-4

  Brey, L ^a   Fernandez Rossier J ^b   Tejedor, C ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITY OF ALICANTE   (Spain)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; FERROMAGNETIC MATERIAL; GALLIUM; MANGANESE;

ARTICLE; DEPOLARIZATION; ELECTRIC CURRENT; ELECTRON TRANSPORT; MAGNETISM; SEMICONDUCTOR;

EID: 13944256507     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235334     Document Type: Article

References (24)

1. Y. Ohno, in Semiconductor Spintronics and Quantum, Computation, edited by D. D. Awschalom, D. Loss, and N. Samarth (Springer-Verlag, New York, 2002).
2. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
3. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. van Wees, Phys. Rev. B 62, R4790 (2000).
4. C.-M. Hu and T. Matsuyama, Phys. Rev. Lett. 87, 066803 (2001).
5. E. I. Rashba, Phys. Rev. B 62, R16 267 (2000).
6. R. Fiederlin, G. Reuscher, W. Ossau, G. Schmidt, A. Wang, and L. W. Molenkamp, Nature (London) 402, 787 (1999).
7. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London) 402, 790 (1999).
8. M. Tanaka and Y. Higo, Phys. Rev. Lett. 87, 026602 (2001).
9. R. Mattana, J.-M. George, H. Jaffres, F. V. Dau, A. Fert, B. Lepine, A. Guivarc'h, and G. Jezequel, Phys. Rev. Lett. 90, 166601 (2003).
10. S. J. Potashnik, K. C. Ku, S. H. Chun, J. J. Berry, N. Samarth, and P. Schiffer, Appl. Phys. Lett. 79, 1495 (2001).
11. K. Edmonds, K. Wang, R. Campion, A. Neumann, N. Farley, B. Gallagher, and C. Foxon, Appl. Phys. Lett. 81, 4991 (2002).
12. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
13. M. Abolfath, T. Jungwirth, J. Brum, and A. MacDonald, Phys. Rev. B 63, 054418 (2001).
14. L. Brey and G. Gómez-Santos, Phys. Rev. B 68, 115206 (2003).
15. H. Ohno, Science 281, 951 (1998).
16. T. Jungwirth, M. Abolfath, J. Sinova, J. Kucera, and A. MacDonald, Appl. Phys. Lett. 81, 4029 (2002).
17. H. X. Tang, R. K. Kawakami, and M. L. Roukes, Phys. Rev. Lett. 90, 107201 (2003).
18. J. Fernandez-Rossier and L. J. Sham, Phys. Rev. B 64, 235323 (2001).
19. R. Wessel and M. Altarelli, Phys. Rev. B 39, 12 802 (1989).
20. Y. X. Liu, D. Z.-Y. Ting, and T. C. McGill, Phys. Rev. B 54, 5675 (1996).
21. A. G. Petukhov, A. N. Chantis, and D. O. Demchenko, Phys. Rev. Lett. 89, 107205 (2002).
22. I. I. Mazin, Phys. Rev. Lett. 83, 1427 (1999).
23. P. Yu and M. Cardona, in Fundamentals of Semiconductors (Springer-Verlag, Heidelberg, 2001).
24. A. Baldereschi and N. O. Lipari, Phys. Rev. B 8, 2697 (1973).