Theory of ferromagnetism in planar heterostructures of (Mn, III)-V semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 23, 2001, Pages

  Fernandez Rossier J ^a   Sham, L J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; MANGANESE; VANADIUM;

ARTICLE; CRYSTAL; ELECTRON; MAGNETISM; QUANTUM MECHANICS; SEMICONDUCTOR; TEMPERATURE;

EID: 0035893989     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.235323     Document Type: Article

References (40)

1. G. Prinz, Phys. Today45, 58 (1995);
2. G A. Prinz, Science282, 1660 (1998).
3. H. Ohno, Appl. Phys. Lett.69, 363 (1996).
4. A. Van Esch, Phys. Rev. B56, 13103 (1997).
5. H. Ohno, Science281, 951 (1998).
6. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, Phys. Rev. B57, R2037 (1998).
7. H. Ohno, J. Magn. Magn. Mater.200, 110 (1999).
8. J K. Furdyna, J. Appl. Phys.64, R29 (1988).
9. R. Fiederling, Nature (London)402, 787 (1999).
10. A T. Filip, Phys. Rev. B62, 9996 (2000).
11. V P. LaBella, Science292, 1518 (2001).
12. A. Hirohata, Phys. Rev. B63, 104425 (2001).
13. Y. Ohno, Nature (London)402, 790 (1999).
14. B T. Jonker, Phys. Rev. B62, 8180 (2000).
15. T. Dietl, A. Haury, and Y. Merle d’Aubigné, Phys. Rev. B55, R3347 (1997).
16. T. Dietl, Science287, 1019 (2000);
17. T. Dietl, H. Ohno, and F. Matsukura, Phys. Rev. B63, 195205 (2001).
18. S. Koshihara, Phys. Rev. Lett.78, 4617 (1997).
19. H. Ohno, Nature (London)408, 944 (2000).
20. N. Akiba, Appl. Phys. Lett.73, 2122 (1998).
21. R K. Kawakami, Appl. Phys. Lett.77, 2379 (2000).
22. Delta-doping of Semiconductors, edited by E.F. Schubert (Cambridge University Press, Cambridge, 1996).
23. R K. Kawakami and A. Gossard (private communication).
24. W. Kohn and L J. Sham, Phys. Rev.140, A1333 (1965).
25. D. Broido and L J. Sham, Phys. Rev. B31, 888 (1985).
26. J M. Luttinger, Phys. Rev.102, 1030 (1956).
27. T. Jungwirth, W A. Atkinson, B H. Lee, and A H. MacDonald, Phys. Rev. B59, 9818 (1999).
28. B. Lee, T. Jungwirth, and A H. MacDonald, Phys. Rev. B61, 15606 (2000).
29. L. Brey and F. Guinea, Phys. Rev. Lett.85, 2384 (2000).
30. A. Ghazali, I C. da Cunha Lima, and M A. Boselli, Phys. Rev. B63, 153305 (2001).
31. J. König, H. Lin, and A H. MacDonald, Phys. Rev. Lett.84, 5628 (2000).
32. M. Yang, S. Sun, and M. Chang, Phys. Rev. Lett.86, 5636 (2001).
33. M. Sigrist, K. Ueda, and H. Tsunetsugu, Phys. Rev. B46, 175 (1992).
34. S.-R. Yang, D. Broido, and L J. Sham, Phys. Rev. B32, 6630 (1985).
35. M E. Lazzouni and L J. Sham, Int. J. Comput. Math. Electr. and Elect. Eng.14, 129 (1995).
36. Y C. Shih and B G. Streetman, Appl. Phys. Lett.59, 1344 (1991);
37. J. Wagner and D. Richards, Delta-dopings of Semiconductors (Ref. 20), Chap. 15.
38. T. Omiya, Physica AE7, 976 (2000).
39. R N. Bhatt and M. Berciu, Phys. Rev. Lett.87, 107203 (2001).
40. A. Haury, Phys. Rev. Lett.79, 511 (1997).