An apparent n to p transition in reactively sputtered indium-tin-oxide high temperature strain gages

Thin Solid Films

Volumn 405, Issue 1-2, 2002, Pages 263-269

  Gregory, Otto J ^a   Luo, Qing ^a   Bienkiewicz, Joseph M ^a   Erwin, Brian M ^a   Crisman, Everett E ^a  

^a University of Rhode Island   (United States)

Author keywords

High temperature strain gage; Hot probe; Indium tin oxide; N p Type transition; Rf sputtering; Thin film strain gage

Indexed keywords

HIGH TEMPERATURE EFFECTS; INDIUM ALLOYS; SEMICONDUCTING FILMS; SENSORS; SPUTTERING; STRAIN MEASUREMENT; THERMAL CYCLING; THERMAL EFFECTS; THIN FILM DEVICES;

THIN FILM SENSORS;

STRAIN GAGES;

EID: 0037154938     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01703-5     Document Type: Article

References (21)

1. Development and characterization of PdCr temperature-compensated wire resistance strain gage
2. A resistance strain gage with repeatable and cancelable apparent strain for use to 800 °C