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Volumn 38, Issue 3, 2005, Pages 468-476
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Pattern formation in planar dc-driven semiconductor-gas discharge devices: Two mechanisms
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
ELECTRIC DISCHARGES;
ELECTRIC POTENTIAL;
ELECTRODES;
FILAMENTS (LAMP);
LUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICON WAFERS;
PATTERN FORMATION;
SEMICONDUCTOR HIGH-OHMIC ELECTRODES;
SEMICONDUCTOR-DISCHARGE GAP (SDG);
SEMICONDUCTOR-GAS DISCHARGE DEVICES';
SEMICONDUCTOR DEVICES;
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EID: 13844257003
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/38/3/019 Document Type: Article |
Times cited : (34)
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References (32)
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