Photoelectrical properties of pulsed laser deposited boron doped p-carbon/n-silicon and phosphorus doped n-carbon/p-silicon heterojunction solar cells

Solar Energy

Volumn 78, Issue 3, 2005, Pages 406-415

  Rusop, M ^a   Tian, X M ^a   Mominuzzaman, S M ^b   Soga, T ^a   Jimbo, T ^a   Umeno, M ^c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^c CHUBU UNIVERSITY   (Japan)

Author keywords

Boron; Doping; Graphite; Heterojunction; Phosphorus; Photoelectrical; PLD

Indexed keywords

ABSORPTION; BORON; CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY CONVERSION; PHOTOELECTRICITY; PHOTONS; PULSED LASER DEPOSITION; SILICON; SUBSTRATES; THIN FILMS; X RAY SPECTROSCOPY;

OPEN CIRCUIT VOLTAGE; PHOTON ABSORPTION; ROOM TEMPERATURE; SEMICONDUCTING CARBON FILMS;

SOLAR CELLS;

ELECTRICAL PROPERTY; PHOTOVOLTAIC SYSTEM; PULSED FLOW;

EID: 13844251942     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2004.08.005     Document Type: Article

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