The junction characteristics of carbonaceous film/n-type silicon (C/n-Si) layer photovoltaic cell

Applied Physics Letters

Volumn 69, Issue 20, 1996, Pages 3042-3044

  Yu, H A ^a   Kaneko, T ^a   Yoshimura, S ^a   Suhng, Y ^a   Sasaki, Y ^b   Otani, S ^c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b GUNMA UNIVERSITY   (Japan)

^c TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041698877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116833     Document Type: Article

References (5)

1. H. A. Yu, T Kaneko, S. Yoshimura, and S. Otani, Appl. Phys. Lett. 68, 547 (1996).
2. H. A Yu, S. Otani, S. Yoshimura, and T. Kaneko, Preprints of 21st Annual Meeting of Carbon Society of Japan, Tokyo, 1994, p. 144.
3. J. C. Trvin, Bell Syst. Tech. J. 41, 378 (1962).
4. S. M. Sze, Semiconductor Devices - Physics and Technology (Wiley, New York, 1985), p. 86.
5. S. M. Sze, Semiconductor Devices - Physics and Technology (Wiley, New York, 1985), p. 24.