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Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

Determination of band-offset enhanced in InGaAsP-InGaAsP strained multiquantum wells by photocurrent measurements

(5) Tari, Davide a De Giorgi, Milena b Cingolani, Roberto b Foti, Ermanno c Coriasso, Claudio c

a Nanoscience Dept (Italy)

b NATIONAL NANOTECHNOLOGY LABORATORY (Italy)

c TTC Turin Technology Center (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN PARAMETERS; THERMAL ACTIVATION; TRANSFER MATRIX METHOD (TMM); WAVELENGTHS;

BAND STRUCTURE; ELECTRIC POTENTIAL; EXCITONS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; STRAIN MEASUREMENT; TEMPERATURE DISTRIBUTION; THERMOANALYSIS;

INDIUM COMPOUNDS;

EID: 13744254210 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1850602 Document Type: Article

Times cited : (3)

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