Three-dimensional transient temperature field model for laser annealing

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Degorce, Jean Yves ^a   Gillet, Jean Numa ^a   Magny, François ^a   Meunier, Michel ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

LASER ANNEALING; SURFACE MELTING; TRANSIENT TEMPERATURE FIELD MODEL (TTFM); ULTRASHALLOW DOPING;

ABLATION; ALGORITHMS; ATOMIC FORCE MICROSCOPY; BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; FINITE DIFFERENCE METHOD; HARDENING; HEURISTIC METHODS; INTERFACES (MATERIALS); MELTING; SEGREGATION (METALLOGRAPHY); SURFACE PHENOMENA; TIME DOMAIN ANALYSIS;

ANNEALING;

EID: 13744249637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846943     Document Type: Article

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