A simple analytical method for the characterization of the melt region of a semiconductor under focused laser irradiation

Applied Surface Science

Volumn 208-209, Issue 1, 2003, Pages 267-271

  Degorce, Jean Yves ^a   Saucier, Antoine ^a   Meunier, Michel ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

Dopant diffusion; Laser melting; Semiconductors

Indexed keywords

DIFFUSION; HEAT TRANSFER; LASER BEAM EFFECTS; MELTING; SEMICONDUCTOR DOPING; ATOMIC FORCE MICROSCOPY; INTERDIFFUSION (SOLIDS); LASER PULSES; SEMICONDUCTING SILICON;

LASER MELTING; ENERGY BALANCE EQUATIONS;

SEMICONDUCTOR MATERIALS; MELTING;

EID: 0037443221     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01350-8     Document Type: Conference Paper

References (9)

1. D. Bäuerle, Laser Processing and Chemistry, third ed., Springer, Berlin, 2000.
2. Wood R.F., Giles G.E. Phys. Rev. B. 23:1981;2923.
3. Tokarev V.N., Kaplan A.F. J. Appl. Phys. 86:1998;2836.
4. Singh R.K., Narayan J. Mater. Sci. Eng. B3:1989;231.
5. H.S. Carslaw, J.C. Jaeger, Conduction of Heat in Solid, Clarendon Press, Oxford, 1988.
6. Tam A.C., Pour J.K., Grigoropoulos C.P. IEEE Trans. Magn. 32:1996;3771.
7. A. Saucier, J.-Y. Degorce, M. Meunier, SIAM J. Appl. Math., submitted for publication.
8. Meunier M., Gagnon Y., Savaria Y., Lacourse A., Cadotte M. Appl. Surf. Sci. 186:2002;52.
9. Kodera H. J. Appl. Phys. 2:1963;212.