Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1-xas matrices

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages 209-215

  Furst J ^a   Pascher, H ^a   Abalmassov, V A ^b   Shamirzaev, T S ^b   Zhuravlev, K S ^b  

^a UNIVERSITY OF BAYREUTH   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ARSENIC; EXCITONS; HOLE MOBILITY; LIGHT POLARIZATION; MAGNETIC FIELD EFFECTS; MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; VECTORS;

ENERGY RELAXATIONS; HANLE EFFECTS; MICROSCOPIC STRUCTURES; SPIN LIFETIME;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 13644272752     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/019     Document Type: Article

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