Optical orientation and the Hanle effect of neutral and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1534091-1534094

  Dzhioev, R I ^a   Korenev, V L ^a   Zakharchenya, B P ^a   Gammon, D ^b   Bracker, A S ^b   Tischler, J G ^b   Katzer, D S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; GALLIUM ARSENIDE;

ARTICLE; DEPOLARIZATION; ELASTICITY; ELECTRON SPIN RESONANCE; ELECTRON TRANSPORT; GEOMETRY; LOW TEMPERATURE; LUMINESCENCE; MAGNETIC FIELD; MICROWAVE RADIATION; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; OPTICAL ROTATION; POLARIZATION; QUANTUM MECHANICS;

EID: 0041321643     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (22)

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