Direct band gap determination in Al x Ga 1-x As epitaxial layers in the indirect gap region 0.4 < x < 0.9

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 513-516

  Ariza Calderon, H ^a   Tirado Mejia, L ^a   Mendoza Alvarez, J G ^b   Torres Delgado, G ^b  

^a UNIVERSIDAD DEL QUINDÍO   (Colombia)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Epitaxial layers grown by LPE; Optical properties of III V semiconductors; Thermoreflectance spectroscopy

Indexed keywords

COMPOSITION EFFECTS; ELECTRON TRANSITIONS; ENERGY GAP; LIQUID CRYSTALS; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; TERNARY SYSTEMS;

BRILLOUIN ZONE; THERMOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031655904     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00445-5     Document Type: Article

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